Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX98 BUX98A
DESCRIPTION
・With
TO-3 package
・High
voltage capability
・High
current capability
・Fast
switching speed
APPLICATIONS
・High
frequency and efficiency converters
・Linear
and switching industrial equipment
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
PARAMETER
BUX98
Collector-base voltage
BUX98A
BUX98
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
Collector-emitter voltage
BUX98A
Emitter-base voltage
Collector current
Collector current-peak ( tp <5 ms )
Base current
Base current-peak ( tp <5 ms )
Total power dissipation
Junction temperature
Storage temperature
T
C
<25℃
Open collector
Open base
450
7
30
60
8
30
250
200
-65~200
V
A
A
A
A
W
℃
℃
Open emitter
1000
400
V
CONDITIONS
VALUE
850
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
0.7
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
