Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・DARLINGTON
・High
DC current gain
・Complement
to type MJ2500/2501
APPLICATIONS
・For
use as output devices in complementary
general purpose amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
MJ3000/3001
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
MJ3000
V
CBO
Collector-base voltage
MJ3001
MJ3000
V
CEO
Collector-emitter voltage
MJ3001
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
80
5
10
0.2
150
200
-55~200
V
A
A
W
℃
℃
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT