INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJ413
DESCRIPTION
·High
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 325V(Min.)
·DC
Current Gain-
: h
FE
= 20-80@ I
C
= 0.5A
APPLICATIONS
·Designed
for medium to high voltage inverters, converters,
regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEX
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
400
400
5
10
2
125
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
