INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 100 V(Min)
·DC
Current Gain-
: h
FE
= 40(Min) @ I
C
= 0.2 A
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= 0.3V(Max.)@ I
C
= 0.5 A
·Complement
to Type MJE253
APPLICATIONS
·Designed
for low power audio amplifier and low-current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
MJE243
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
a
=25℃
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
100
100
7
4
8
1
1.5
UNIT
V
V
V
A
A
A
P
C
W
15
150
-65~150
℃
℃
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
8.34
83.4
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
