Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Respectively
complement to type
MJE4350/4351/4352/4353
・DC
current gain h
FE
=8(Min)@I
C
=16A
APPLICATIONS
・For
use in high power audio amplifier and
switching regulator circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJE4340/4341/4342/4343
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
MJE4340
V
CBO
Collector-base
voltage
MJE4341
Open emitter
MJE4342
MJE4343
MJE4340
V
CEO
Collector-emitter
voltage
MJE4341
Open base
MJE4342
MJE4343
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
140
160
7
16
20
5
125
150
-65~150
V
A
A
A
W
℃
℃
140
160
100
120
V
CONDITIONS
VALUE
100
120
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
℃/W