INCHANGE Semiconductor
isc
Product Specification
MJW16010A
isc
Silicon NPN Power Transistor
DESCRIPTION
·Low
Collector Saturation Voltage
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 500V(Min)
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for high-voltage, high-speed,power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line-operated switchmode applications.
Typical applications:
·Switching
regulators
·Inverters
·Solenoids
·Relay
drivers
·Motor
controls
·Deflection
circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-EmitterVoltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
500
6
15
20
10
15
135
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.92
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
