ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
MIN TYP MAX UNITS
1.2
1.4
V
TEST CONDITION
I
F
= ± 10mA
80V
6V
150mW
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
80
6
100
V
V
nA
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 40V
± 5mAI
F
, 5V V
CE
± 10mAI
F
, 2mAI
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 10V ,
I
C
= 2mA, R
L
= 100
Ω
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
Current Transfer Ratio (CTR) (Note 2)
PS2505-1, PS2505-2, PS2505-4
80
600
%
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Output Rise Time
Output Fall Time
tr
tf
5300
7500
5x10
10
3
5
0.3
V
V
RMS
V
PK
Ω
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory
15/4/03
DB92393m-AAS/A4
ISOCOM [ ISOCOM COMPONENTS ]
