DSEI 30, 1200 V
70
A
60
50
I
F
40
30
20
10
0
0
1
V
F
2
3
V
4
T =100°C
µC V
VJ
= 540V
R
5
4
T
VJ
=25°C
T
VJ
=100°C
T
VJ
=150°C
Q
r
3
2
max.
1
0
1
10
-di
F
/dt
100 A/µs 1000
typ.
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
6
50
A
40
I
RM
T
VJ
=100°C
V
R
= 540V
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
max.
30
20
typ.
10
0
0
200
-di
F
/dt
400
A/µs
600
Fig. 1 Forward current
versus voltage drop.
1.4
1.2
1.0
K
f
0.8
0.6
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
-di
F
/dt.
60
1.0
µs
0.8
T
VJ
=100°C
V
R
=540V
D1
1200
ns
1000
V
FR
800
t
fr
600
400
t
fr
V
50
40
V
FR
30
20
I
RM
t
rr
max.
0.6
I
F
=30A
I
F
=60A
I
F
=30A
I
F
=15A
Q
R
0.4
0.4
0.2
0.2
0.0
0
40
T
J
80
120 °C 160
0.0
0
200
-di
F
/dt
400
A/µs 600
typ.
10
0
0
200
di
F
/dt
T
VJ
=125°C
I
F
=30A
400 A/µs 600
200
0
Fig. 4 Dynamic parameters versus
junction temperature.
1.0
K/W
0.8
Z
thJC
0.6
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
versus di
F
/dt.
Dimensions
Dim.
A
B
C
D
E
F
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
2.2
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.54
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
0.4
G
H
J
K
L
M
0.2
0.0
0.001
0.01
0.1
t
1
s
10
N
Fig. 7 Transient thermal impedance junction to case.
© 1999 IXYS All rights reserved
D1 - 21
IXYS [ IXYS CORPORATION ]
