PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 24N80P
IXFK 24N80P
IXFT 24N80P
V
DSS
= 800 V
I
D25
= 24 A
R
DS(on)
≤
400 mΩ
Ω
t
rr
≤
250 ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/μs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
800
800
±30
±40
24
55
12
50
1.5
10
650
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
TO-247 (IXFH)
G
D
S
D (TAB)
TO-268 (IXFT) Case Style
G
V/ns
W
°C
°C
°C
S
D (TAB)
TO-264 AA (IXFK)
Mounting torque (TO-247 & TO-264)
TO-247
TO-268
TO-264
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
1.13/10 Nm/lb.in.
6
5
10
300
260
g
g
g
°
C
°
C
G
D
S
(TAB)
T
L
T
SOLD
G = Gate
S = Source
Features
D = Drain
Tab = Drain
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
3.0
5.0
±100
25
1000
400
V
V
nA
μA
μA
mΩ
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
DS99572E(07/06)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
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