MII 300-12 A4 MID 300-12 A4
MDI 300-12 A4
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Dimensions in mm (1 mm = 0.0394")
min.
typ. max.
V(BR)CES
VGE(th)
ICES
VGE = 0 V
1200
4.5
V
V
IC = 8 mA, VCE = VGE
VCE = VCES
6.5
TJ = 25°C
TJ = 125°C
13 mA
mA
20
IGES
VCE = 0 V, VGE = ±20 V
±800 nA
VCE(sat)
IC = 200 A, VGE = 15 V
2.2
2.7
V
Cies
Coes
Cres
13
2
nF
nF
nF
VCE = 25 V, VGE = 0 V, f = 1 MHz
1
td(on)
tr
td(off)
tf
100
60
ns
ns
Inductive load, TJ = 125°C
600
90
ns
IC = 200 A, VGE = ±15 V
VCE = 600 V, RG = 3.3 W
ns
Eon
Eoff
32
mJ
mJ
29
RthJC
RthJS
0.09 K/W
K/W
with heatsink compound
0.18
Equivalent Circuits for Simulation
Reverse Diode (FRED)
Characteristic Values
Conduction
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
VF
IF
IF = 200 A, VGE = 0 V,
2.2
1.7
2.5
2.3
V
V
IF = 200 A, VGE = 0 V, TJ = 125°C
TC = 25°C
TC = 80°C
450
280
A
A
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.3 V; R0 = 6.2 mW
IRM
trr
IF = 200 A, VGE = 0 V, -diF/dt = 1800 A/ms
TJ = 125°C, VR = 600 V
180
200
A
ns
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 2.4 mW
RthJC
RthJS
0.15 K/W
K/W
with heatsink compound
0.3
Thermal Response
IGBT (typ.)
Cth1 = 0.50 J/K; Rth1 = 0.088 K/W
Cth2 = 1.16 J/K; Rth2 = 0.002 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.44 J/K; Rth1 = 0.146 K/W
Cth2 = 0.80 J/K; Rth2 = 0.003 K/W
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