MWI 50-12 E7
MKI 50-12 E7
20
mJ
td(on)
100
ns
90
80
70
60
50
E
off
8
mJ
td(off)
800
ns
600
t
16
E
on
6
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
VJ
= 125°C
12
8
4
Eon
tr
t
4
400
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
VJ
= 125°C
40
30
20
10
0
2
Eoff
tf
200
0
0
20
40
60
80
I
C
0
20
40
60
80
I
C
0
100
A
120
100 A
Fig. 7
Typ. turn on energy and switching
times versus collector current
300
ns
250
200
150
t
E
off
Fig. 8 Typ. turn off energy and switching
times versus collector current
12
mJ
1200
ns
1000
800
600
Eoff
15.0
mJ
12.5
E
on
10.0
7.5
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
td(on)
10
8
6
4
2
0
0
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
td(off)
t
Eon
5.0
2.5
0.0
0
20
40
60
80
R
G
tr
100
50
0
400
200
tf
100
Ω
120
20
40
60
80
R
G
100
Ω
120
0
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
1
K/W
0.1
Fig.10 Typ. turn off energy and switching
times versus gate resistor
120
A
diode
IGBT
100
I
CM
80
60
40
Z
thJC
0.01
single pulse
0.001
20
0
0
R
G
= 22
Ω
T
VJ
= 125°C
200
400
600
800 1000 1200 1400
V
V
CE
0.0001
0.00001 0.0001 0.001
MWI5012E7
0.01
0.1
t
1
s 10
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
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