MWI 100-12 A8
25
mJ
td(on)
20
E
on
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 6.8
Ω
T
VJ
= 125°C
10
ns
8
t
6
4
2
E
off
25
mJ
10
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 6.8
Ω
T
VJ
= 125°C
n
75
20
15
15
10
5
Eon
50
10
5
0
0
50
100
150
I
C
A
25
0
0
40
80
I
C
0
120
A
160
0
200
Fig. 7 Typ. turn on energy and switching
times versus collector current
40
mJ
E
on
30
8
td(on)
Fig. 8 Typ. turn off energy and switching
times versus collector current
12
ns
10
t
E
off
30
mJ
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
n
20
20
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 100 A
T
VJ
= 125°C
Eon
6
4
2
0
10
10
0
0
10
20
30
R
G
40
Ω
50
0
0
10
20
30
R
G
40
Ω
50
0
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
250
A
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
Z
thJC
diode
IGBT
200
I
CM
150
100
50
0
0
200
R
G
= 6:8
Ω
T
VJ
= 125°C
0.01
0.001
single pulse
400
600
800 1000 1200 1400
V
V
CE
0.0001
0.0001
MWI100-12A8
0.001
0.01
0.1
t
1
s 10
Fig. 11 Reverse biased safe operating area
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 12 Typ. transient thermal impedance
451
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4-4
IXYS [ IXYS CORPORATION ]
