MWI 75-12 A8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
I
C25
= 125 A
= 1200 V
V
CES
V
CE(sat) typ.
= 2.2 V
1
2
5
6
9
10
19
17
15
3
4
14, 20
7
8
11
12
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 15
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 15
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
125
85
I
CM
= 150
V
CEK
≤
V
CES
10
500
V
V
A
A
A
µs
W
Features
•
NPT IGBT technology
•
low saturation voltage
•
low switching losses
•
switching frequency up to 30 kHz
•
square RBSOA, no latch up
•
high short circuit capability
•
positive temperature coefficient for
easy parallelling
•
MOS input, voltage controlled
•
ultra fast free wheeling diodes
•
solderable pins for PCB mounting
•
package with copper base plate
Advantages
•
space savings
•
reduced protection circuits
•
package designed for wave soldering
Typical Applications
•
AC motor control
•
AC servo and robot drives
•
power supplies
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.2
2.5
4.5
3
400
100
50
650
50
12.1
10.5
5.5
350
2.6
6.5
5
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.25 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 3 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 75 A
V
GE
= ±15 V; R
G
= 15
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 75 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-2
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IXYS [ IXYS CORPORATION ]
