Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N4921
V
CEO
Collector-emitter
sustaining voltage
2N4922
2N4923
V
CEsat
V
BEsat
V
BE
Collector-emitter saturation voltage
Emitter-base saturation voltage
Emitter-base on voltage
2N4921
I
CEO
Collector cut-off current
2N4922
2N4923
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
I
C
=1.0A ;I
B
=0.1A
I
C
=1.0A ;I
B
=0.1A
I
C
=1A ; V
CE
=1V
V
CE
=20V; I
B
=0
V
CE
=30V; I
B
=0
V
CE
=40V; I
B
=0
I
C
=0.1A; I
B
=0
2N4921 2N4922 2N4923
CONDITIONS
MIN
40
60
80
TYP.
MAX
UNIT
V
0.6
1.3
1.3
V
V
V
0.5
mA
V
CB
= Rated V
CBO
;I
E
=0
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
T
C
=125℃
V
EB
=5V; I
C
=0
I
C
=50mA ; V
CE
=1V
I
C
=500mA ; V
CE
=1V
I
C
=1A ; V
CE
=1V
I
C
=250mA ; V
CE
=10V;f=1MHz
f=100kHz ; V
CB
=10V;I
E
=0
40
30
10
3.0
0.1
0.1
0.5
1.0
mA
mA
mA
150
MHz
100
pF
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
