Product Specification
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Silicon NPN Power Transistors
2N5264
DESCRIPTION
・With
TO-3 package
・High
speed switching
・High
reliability
APPLICATIONS
・Switching
regulators
・DC-DC
convertor
・Solid
state relay
・General
purpose power amplifiers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
MAXIMUN RATINGS(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
c
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
300
180
7
7
2
87
165
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.0
UNIT
℃/W
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