Product Specification
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Silicon NPN Power Transistors
DESCRIPTION
・
・With
TO-220 package
・High
power dissipation
APPLICATIONS
・Power
amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N5293 2N5295 2N5297
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2N5293
V
CBO
Collector-base voltage
2N5295
2N5297
2N5293
V
CEO
Collector-emitter voltage
2N5295
2N5297
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
80
60
80
70
40
60
7
4
2
36
150
-65~150
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
3.47
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
