Product Specification
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Silicon PNP Power Transistors
2N6296 2N6297
DESCRIPTION
・With
TO-66 package
・DARLINGTON
・Complement
to type 2N6294/6295
APPLICATIONS
・For
high gain amplifier and medium
speed switching applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
2N6296
Collector-base voltage
2N6297
2N6296
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Collector-emitter voltage
2N6298
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
80
5
4
8
80
50
150
-65~200
V
A
A
mA
W
℃
℃
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
MAX
3.5
UNIT
℃/W
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