Product Specification
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
CONDITIONS
I
C
= 50mA ; I
B
= 0
I
C
= 3A; I
B
= 0.3A
I
C
= 3A; I
B
= 0.3A
V
CB
= 200V; I
E
= 0
V
EB
= 8V; I
C
= 0
I
C
= 3A ; V
CE
= 4V
I
E
= -0.5A ; V
CE
= 12V
I
E
=0 ; V
CB
=10V;f
test
=1.0MHz
70
MIN
120
2SC3835
TYP.
MAX
UNIT
V
0.5
1.2
100
100
220
30
110
V
V
μA
μA
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= 3A ;I
B1
=0.3A; I
B2
= -0.6A
R
L
= 16.7Ω; V
CC
= 50V
0.5
3.0
0.5
μs
μs
μs
h
FE
Classifications
O
70-120
Y
100-200
G
160-220
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
