SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
2N3906
EPITAXIAL PLANAR PNP TRANSISTOR
C
Low Leakage Current
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @V
CB
=5V.
Complementary to 2N3904.
L
M
1
2
3
F
H
A
FEATURES
N
K
D
G
E
F
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-40
-40
-5
-200
-50
625
1.5
150
-55 150
UNIT
V
V
V
mA
mA
mW
W
TO-92
2002. 9. 12
Revision No : 2
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
