SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R
DS(ON)
.
Rugged and reliable.
High saturation current capablity.
K
D
E
G
B
2N7000
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
C
A
Voltage controlled small signal switch.
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current
Pulsed
(Note 1)
)
SYMBOL
V
DSS
V
GSS
I
D
I
DP
P
D
T
j
T
stg
1%
RATING
60
20
500
mA
2000
625
150
-55 150
mW
UNIT
F
H
F
V
L
V
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. SOURCE
2. GATE
3. DRAIN
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1) Pulse Width 10
, Duty Cycle
TO-92
EQUIVALENT CIRCUIT
D
G
S
PLEASE HANDLE WITH CAUTION.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BV
DSS
I
DSS
I
GSSF
I
GSSR
TEST CONDITION
V
GS
=0V, I
D
=10 A
V
DS
=60V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
100
-100
UNIT
V
A
nA
nA
2009. 11. 17
Revision No : 2
1/4
KEC [ KEC(KOREA ELECTRONICS) ]
