SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE APPLICATION.
FEATURE
For Complementary with NPN Type BC549/550.
B
BC559/560
EPITAXIAL PLANAR PNP TRANSISTOR
C
A
N
K
E
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
D
SYMBOL
BC559
V
CBO
RATING
-30
UNIT
V
Collector-Base Voltage
BC560
BC559
Collector-Emitter Voltage
BC560
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
-50
-30
V
L
1
2
F
H
F
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
3
-5
-100
625
150
-55 150
V
mA
mW
M
C
-45
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification A:110
220,
B:200
BC559
BC560
BC559
BC560
SYMBOL
V
(BR)CEO
TEST CONDITION
I
C
=-10mA, I
B
=0
MIN.
-30
-45
-30
I
C
=-10 A, I
E
=0
I
E
=-10 A, I
C
=0
V
CB
=-30V, I
E
=0
I
C
=-2mA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-100mA, I
B
=-5mA
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, V
CE
=-5V, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
I
C
=-200 A, V
CE
=-5V
Rg=10k
450,
C:420 800
, f=1kHz
-50
-5.0
-
110
-0.55
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-0.9
300
-
-
MAX.
-
V
-
-
V
-
-
-15
800
-0.7
-0.6
-
-
7.0
4.0
V
V
V
MHz
pF
dB
V
nA
UNIT
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
BE(ON)
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
1999. 11. 30
Revision No : 2
1/1
KEC [ KEC(KOREA ELECTRONICS) ]
