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BCX19 参数 Datasheet PDF下载

BCX19图片预览
型号: BCX19
PDF下载: 下载PDF文件 查看货源
内容描述: 外延平面NPN晶体管 [EPITAXIAL PLANAR NPN TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 1 页 / 32 K
品牌: KEC [ KEC(KOREA ELECTRONICS) ]
   
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
Super Mini Packaged Transistors for Hybrid Circuits.
2
L
E
B
BCX19
EPITAXIAL PLANAR NPN TRANSISTOR
L
3
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CEO
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
RATING
50
45
5
500
-500
200
150
-65 150
UNIT
P
P
V
C
N
V
V
mA
mA
mW
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
G
H
1. EMITTER
2. BASE
3. COLLECTOR
K
SOT-23
Marking
Lot No.
Type Name
U1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
SYMBOL
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
TEST CONDITION
I
C
=10mA, I
B
=0
I
C
=10 A, V
BE
=0
I
E
=10 A, I
C
=0
V
CB
=20V, I
E
=0
Ta=150 , V
CB
=20V, I
E
=0
V
CE
=1V, I
C
=100mA
DC Current Gain
h
FE
V
CE
=1V, I
C
=300mA
V
CE
=1V, I
C
=500mA
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
BE(ON)
V
CE(sat)
f
T
C
ob
V
CE
=1V, I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=10mA, V
CE
=5V, f=100MHz
V
CB
=10V, f=1MHz
MIN.
45
50
5.0
-
-
100
70
40
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
200
6.0
MAX.
-
-
-
100
5.0
600
-
-
1.2
0.62
-
-
V
V
MHz
pF
UNIT
V
V
V
nA
A
1999. 11. 30
Revision No : 2
J
D
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