SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
KDV240
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B
1
G
FEATURES
High Capacitance Ratio : C
1V
/C
4V
=2.1(Typ.)
Low Series Resistance : r
s
=0.28
Useful for Small Size Tuner.
(Typ.)
K
A
H
E
2
D
J
C
I
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
T
j
T
stg
RATING
10
150
-55 150
UNIT
V
M
M
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
MILLIMETERS
_
2.50 + 0.1
_ 0.05
1.25 +
_
0.90 + 0.05
0.30+0.06/-0.04
_
1.70 + 0.05
MIN 0.17
_
0.126 + 0.03
0~0.1
1.0 MAX
_
0.15 + 0.05
_
0.4 + 0.05
2 +4/-2
4~6
1. ANODE
2. CATHODE
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
SYMBOL
V
R
I
R
C
1V
C
4V
K
r
S
I
R
=1 A
V
R
=10V
V
R
=1V, f=1MHz
V
R
=4V, f=1MHz
C
1V
/C
4V
, f=1MHz
V
R
=1V, f=470MHz
TEST CONDITION
MIN.
10
-
9.7
4.45
1.8
-
TYP.
-
-
-
-
2.1
0.28
MAX.
-
3
11.1
5.45
-
0.4
UNIT
V
nA
pF
Marking
Type Name
EC
2003. 1. 27
Revision No : 0
F
L
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
