SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C
1V
/C
4V
=3.4(Min.)
Low Series Resistance
Excellent Linearity (CV Curve)
KDV275
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B
1
G
K
E
A
H
2
D
J
C
I
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
T
j
T
stg
RATING
28
150
-55 150
1. ANODE
2. CATHODE
UNIT
V
M
M
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
MILLIMETERS
_
2.50 + 0.1
_ 0.05
1.25 +
_
0.90 + 0.05
0.30+0.06/-0.04
_
1.70 + 0.05
MIN 0.17
_
0.126 + 0.03
0~0.1
1.0 MAX
_
0.15 + 0.05
_
0.4 + 0.05
2 +4/-2
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Reverse Current
SYMBOL
V
R
I
R
C
1V
Capacitance
C
2V
C
4V
Capacitance Ratio
Series Resistance
K
r
S
I
R
=10 A
V
R
=16V
V
R
=1V, f=1MHz
V
R
=2V, f=1MHz
V
R
=4V, f=1MHz
C
1V
/C
4V
, f=1MHz
C
T
=8pF, f=470MHz
TEST CONDITION
MIN.
20
-
15.40
8.50
3.60
3.4
-
TYP.
-
-
16.60
10.20
4.30
-
-
MAX.
-
5
17.90
11.90
5.05
-
0.7
pF
UNIT
V
nA
CLASSIFICATION OF CAPACITANCE GRADE
GRADE
A
B
C
D
E
CAPACITANCE (C
2V
)
8.5 9.15
9.05~9.85
9.75 10.65
10.55~11.35
11.25~11.90
UNIT
pF
pF
pF
pF
pF
Marking
Type Name
Grade
C
2003 1. 27
Revision No : 0
F
L
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
