SEMICONDUCTOR
TECHNICAL DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.),
V
CE
=4V, I
C
=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117.
H
L
C
TIP112
EPITAXIAL PLANAR NPN TRANSISTOR
A
R
S
E
F
D
P
Q
T
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
DC
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
100
100
5
2
4
50
2
50
150
UNIT
V
V
V
A
K
1
J
M
M
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
mA
W
EQUIVALENT CIRCUIT
C
-65
150
B
O
2
3
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
_
Φ3.60
+ 0.20
3.00
6.70 MAX
_
13.60 + 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
_
9.50 + 0.20
_
8.00 + 0.20
2.90 MAX
N
G
B
R
1
=
10kΩ
R
2
=
0.6kΩ
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
SYMBOL
I
CEO
I
CBO
I
EBO
h
FE
V
CEO(SUS)
V
CE(sat)
V
BE(ON)
C
ob
TEST CONDITION
V
CE
=50V, I
B
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=2A
I
C
=30mA, I
B
=0
I
C
=2A, I
B
=8mA
V
CE
=4V, I
C
=2A
V
CB
=10V, I
E
=0, f=0.1MHz
MIN.
-
-
-
1000
500
100
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
2
1
2
-
-
-
2.5
2.8
100
V
V
V
pF
UNIT
mA
mA
1999. 11. 16
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
