FQPF2N60
April 2000
QFET
FQPF2N60
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
• 1.6A, 600V, R
DS(on)
= 4.7Ω @V
GS
= 10 V
• Low gate charge ( typical 9.0 nC)
transistors are produced using Corise Semiconductorÿs proprietary,
• Low Crss ( typical 5.0 pF)
planar stripe, DMOS technology.
• Fast switching
This advanced technology has been especially tailored to
• 100% avalanche tested
minimize on-state resistance, provide superior switching
• Improved dv/dt capability
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
TM
suited for high efficiency switch mode power supply.
D
!
"
G
!
GD S
! "
"
"
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQPF2N60
600
1.6
1.0
6.4
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
140
1.6
2.8
4.5
28
0.22
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
4.46
62.5
Units
°CW
°CW
KERSEMI [ Kersemi Electronic Co., Ltd. ]
