IRF1404PbF
10000
8000
C, Capacitance(pF)
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ
Ciss = C + Cgd, Cds SHORTED
gs
20
I
D
= 121A
V
DS
= 32V
V
DS
= 20V
16
6000
Ciss
12
4000
Coss
8
2000
Crss
0
1
10
100
4
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
T
J
= 175
°
C
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
1000
10us
10
100
100us
1ms
T
J
= 25
°
C
1
10
10ms
0.1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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