SMD Type
Schottky Barrier (Double) Diodes
1PS59SB Series
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Low forward voltage
Guard ring protoected
Small SMD package.
1
2
+0.1
1.3
-0.1
Features
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forwrad current
Total power dissipation (per package)
Storage temperature
Junction temperature
Symbol
V
R
I
F
I
FSM
I
FSM
P
tot
T
stg
T
j
t
p
t
p
T
amb
1s; ä
0.5
Conditions
Min
Max
30
200
300
600
250
-65
+150
125
Unit
V
mA
mA
mA
mW
10 ms
25
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
I
F
= 0.1 mA
I
F
= 1 mA
forward voltage
V
F
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
reverse current
I
R
V
R
= 25 V
when switched from I
F
= 10 mA to
reverse recovery time
t
rr
I
R
= 10 mA; R
L
= 100
measured at I
R
= 1 mA
diode capacitance
thermal resistance from junction to ambient
C
d
R
th j-a
f = 1 MHz; V
R
= 1 V
10
500
pF
K/W
5
ns
Max
240
320
400
500
800
2
A
mV
Unit
Marking
Type
Marking
1PS59SB10
10
1PS59SB14
14
1PS59SB15
15
1PS59SB16
16
0-0.1
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