SMD Type
N-Channel Enhanceent Mode
Field Effect Transistor
2N7002E
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
MOSFET
Unit: mm
+0.1
2.4
-0.1
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
+0.1
1.3
-0.1
Low On-Resistance: R
DS(ON)
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Drain-Gate Voltage
R
GS
1.0 m
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
R
JA
Rating
60
60
20
40
240
300
417
-55 to +150
Unit
V
V
V
mA
mW
W
Gate-Source Voltage -Continuous
Pulsed
Drain Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
T
j
, T
STG
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ T
C
= 25
@ T
C
= 125
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj = 25
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
I
GSS
V
GS(th)
R
DS (ON)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
V
DD
= 30V, I
D
= 0.2A,R
L
= 150
= 10V,R
GEN
= 25
,V
GEN
V
DS
= 25V, V
GS
= 0V,f = 1.0MHz
V
GS
=
15V, V
DS
= 0V
1.0
1.6
2.0
0.8
80
22
11
2.0
7.0
11
50
25
5.0
20
20
1.0
Symbol
V
DSS
I
DSS
Testconditons
V
GS
= 0V, I
D
= 10
A
Min
60
Typ
70
1.0
500
10
2.5
3
4
A
mS
pF
pF
pF
ns
ns
nA
V
Max
Unit
V
A
V
DS
= 60V, V
GS
= 0V
V
DS
= V
GS
, I
D
= 250mA
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
Marking
Marking
K7B
0-0.1
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