SMD Type
NPN Transistor
2SC1815
Transistors
IC
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Features
Power dissipation
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
60
50
5
150
200
125
-55 to 125
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cut to off current
Collector cut to off current
Emitter cut to off current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
I
c
= 100
A, I
E
=0
Testconditons
Min
60
50
0.1
0.1
0.1
130
400
0.25
1
80
V
V
MHz
Typ
Max
Unit
V
V
A
A
A
I
c
= 0.1mA, I
B
=0
V
CB
=60V, I
E
=0
V
CE
=50V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
= 6V, I
C
= 2mA
I
C
=100 mA, I
B
= 10mA
I
C
=100 mA, I
B
= 10mA
V
CE
=10V, I
C
= 1mA,f=30MHz
h
FE
Classification
Marking
Rank
h
FE
130
L
200
200
HF
H
400
+0.1
0.38
-0.1
0-0.1
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