SMD Type
KO3409
(AO3409)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
Testconditons
I
D
=250 A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V ,TJ=55
V
DS
=0V, V
GS
= 20V
V
DS
=V
GS
I
D
=-250 A
V
GS
=-10V, I
D
=-2.6A
Static Drain-Source On-Resistance
r
DS(ON)
V
GS
=-10V, I
D
=-2.6A
V
GS
=-4.5V, I
D
=-2A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=-1A,V
GS
=0V
I
F
=-2.6A, d
I
/d
t
=100A/
I
F
=-2.6A, d
I
/d
t
=100A/
s
s
V
GS
=-10V, V
DS
=-15V, R
L
=5.8 ,R
GEN
=3
I
D(ON)
g
fs
C
iss
C
oss
C
rss
R
g
Q
g
V
GS
=-4.5V, V
DS
=-15V, I
D
=-2.6A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-5A
-5
3
T
J
=125
-1
Min
-30
MOSFET
Typ
Max
Unit
V
-1
-5
100
-1.9
97
135
166
-3
130
150
200
A
nA
V
m
m
A
3.8
302
50.3
37.8
12
6.8
2.4
1.6
0.95
7.5
3.2
17
6.8
16.8
10
-2
-0.82
-1
22
18
9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A
V
370
S
pF
pF
pF
* Repetitive rating, pulse width limited by junction temperature.
2
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