SMD Type
N-Channel Enhancement Mode
Field Effect Transistor
KO3414
(AO3414)
SOT-23
MOSFET
IC
Unit: mm
Features
V
DS (V)
= 20V
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
R
DS(ON)
R
DS(ON)
63m
87m
(V
GS
= 2.5V)
(V
GS
= 1.8V)
0.55
R
DS(ON)
50m
(V
GS
= 4.5V)
+0.1
1.3
-0.1
I
D
= 4.2A (V
GS
=4.5V)
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
1. Gate
2.Emitter
2. Source
+0.1
0.38
-0.1
0-0.1
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current *1
T
A
=25
T
A
=70
I
DM
P
D
R
thJA
R
thJC
T
J
, T
STG
Symbol
V
DS
V
GS
I
D
Rating
20
8
4.2
3.2
15
1.4
0.9
125
80
-55 to 150
/W
/W
W
A
Unit
V
V
Pulsed Drain Current *2
Power Dissipation *1
T
A
=25
T
A
=70
Themal Resistance.Junction-to-Ambient *1
Themal Resistance.Junction-to-Case
Junction and Storage Temperature Range
*1The value of R
èJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz.
Copper, in a still air environment with T
A
=25
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