SMD Type
NPN Medium Power Transistor
BCP54; BCP55; BCP56
SOT-223
Transistors
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
High collector current
1.3 W power dissipation.
+0.2
6.50
-0.2
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1
2
2.9
4.6
3
+0.1
0.70
-0.1
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
BCP54
BCP55
BCP56
collector-emitter voltage
BCP54
BCP55
BCP56
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
V
EBO
I
C
I
CM
I
BM
P
tot
Tstg
Symbol
Rating
45
Unit
V
V
V
V
V
V
V
A
A
A
W
V
CBO
60
100
45
V
CEO
60
80
5
1
1.5
0.2
1.33
-65 to +150
150
-65 to +150
94
13
T
j
T
amb
R
th j-a
R
th j-s
K/W
K/W
+0.15
1.65
-0.15
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