SMD Type
PNP Medium Power Transistor
BCP69
SOT-223
Transistors
Unit: mm
+0.2
3.50
-0.2
Features
High current.
Three current gain selections.
1.4 W total power dissipation.
+0.2
6.50
-0.2
0
.1max
+0.05
0.90
-0.05
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1
2
2.9
4.6
3
+0.1
0.70
-0.1
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Peak base current
Total power dissipation
*1
*2
*3
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
*1
*2
*3
Thermal resistance from junction to solder point
R
th(j-s)
R
th(j-a)
200
125
89
15
K/W
K/W
K/W
K/W
T
stg
T
j
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
Rating
-32
-20
-5
-1
-2
-200
Unit
V
V
V
A
A
mA
P
tot
0.625
1
1.4
-65 to +150
150
-65 to +150
W
W
W
T
amb
*1 Device mounted on a FR4 PCB; single-sided copper; tinplated; standard footprint
-for
SOT223.
*2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm
2
collector mounting pad.
*3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm
2
collector mounting pad.
+0.15
1.65
-0.15
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