SMD Type
NPN General Purpose Amplifier
BSS64
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
NPN general purpose amplifier
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Total device dissipation
Derate above 25
Thermal resistance, junction to ambient
unless otherwise noted
Symbol
V
CE0
V
CBO
V
EBO
I
C
T
j
T
stg
P
D
R
èJA
Rating
80
120
5
200
150
-55 to +150
350
2.8
357
mW
mW/
/W
Unit
V
V
V
mA
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-cutoff current
Emitter-base cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain - bandwidth product
Output capacitance
unless otherwise noted
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Testconditons
I
C
= 4.0 mA, I
B
= 0
I
C
= 100 ìA, I
E
= 0
I
E
= 100 ìA, I
C
= 0
V
CB
= 90 V, I
E
= 0
V
CB
= 90 V, I
E
= 0, T
A
= 150
V
EB
= 5.0 V, I
C
= 0
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 4.0 mA, I
B
= 400ìA
I
C
= 50 mA, I
B
= 15 mA
I
C
= 4.0 mA, I
B
= 400 ìA
I
C
= 4.0 mA, V
CE
= 10,f = 35 MHz
V
CB
= 10 V, f = 1.0 MHz
60
5
20
0.15
0.2
1.2
V
V
V
MHz
pF
Min
80
120
5
0.1
50
200
Typ
Max
Unit
V
V
V
ìA
ìA
nA
Marking
Marking
U3
0-0.1
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