SMD Type
Schottky Barrier Diodes
MMBD101
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
+0.1
2.4
-0.1
Features
Low Noise Figure-6.0dB Typ@1.0GHz
Very Low Capacitance-Less Than 1.0pF@zero Volts
High Forward Conductance-0.5volts(typ)@I
F
=10mA
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
A bsolute M axim um R atings T a = 25
P aram eter
R everse voltage
F orward P ower D issipation
@ T
A
= 25
D erate above 25
Junction tem perature
S torage tem perature range
T
j
T
stg
pF
280
2.2
150
-55 to +150
mW
mW/
S ym bol
V
R
V alue
7.0
U nit
V
Electrical Characteristics Ta = 25
Parameter
Reverse Breakdown Voltage
Diode Capacitance
Forward Voltage
Reverse Leakage
Symbol
V
(BR)R
C
T
V
F
I
R
Conditions
I
R
= 10
A
Min
7.0
Typ
10
0.88
0.5
0.02
1.0
0.6
0.25
Max
Unit
V
pF
V
A
V
R
= 0,f =1.0MHz,Note1
I
F
= 10 mA
V
R
= 3.0 V
Marking
Marking
4M
0-0.1
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