Infrared Emitting Diodes(GaAs)
KODENSHI
EL-1ML2
DIMENSIONS
The EL-1ML2, a high-power GaAs IRED mounted in
a TO-18 type header with clear epoxy encapsulation,
has wide beam angle and is relatively low-cost
compared to TO-18 can-type devices.
(Unit : mm)
FEATURES
•Wide beam angle
•Relative low cost against metal can package
•Low profile package
APPLICATIONS
•Optical switches
•Encoders
•Optical readers
MAXIMUM RATINGS
Item
Reverse voltage
Forward current
Pulse forward current
*1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
*2
(Ta=25℃)
Symbol
V
R
I
F
I
FP
P
D
Topr.
Tstg.
Tsol.
Rating
5
100
1
170
-25~+100
-25~+100
260
Unit
V
mA
A
mW
℃
℃
℃
*1. pulse width :tw ≦100 μ
sec.period :T=10msec.
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
(Ta=25℃)
Symbol
V
I
R
Ct
P
O
λp
Δλ
△θ
F
Conditions
I
F
=50mA
V
R
=5V
f=1MHz
I
F
=50mA
I
F
=50mA
I
F
=50mA
Min.
Typ.
1.2
25
2.7
940
50
±32
Max.
1.5
10
Unit.
V
μ
A
pF
mW/sr
nm
nm
deg.
- 1-