FEDD56V16161N-01
Issue Date : April 27, 2016
MSM56V16161N
2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16161N is a 2-Bank 524,288-word 16-bit Synchronous dynamic RAM. The device
operates at 3.3V. The inputs and outputs are LVTTL compatible.
FEATURES
Product Name
Organization
MSM56V16161N
2Bank x 524,288Word x 16Bit
2,048Row x 256Column
3.3V0.3V
Address Size
Power Supply VCC (Core)
Power Supply VCCQ (I/O)
Interface
3.3V0.3V
LVTTL compatible
Operating Frequency
Operating Temperature
Function
Max. 166MHz (Speed Rank 6)
0 to 70°C
Standard SDRAM command interface
2, 3
/CAS Latency
Burst Length
1, 2, 4, 8, Full page
Burst Type
Sequential, Interleave
Burst, Single
Write Mode
Refresh
Auto-Refresh, 4,096cycle/64ms (0°C Ta 70°C), Self-Refresh
Package
50-Pin Plastic TSOP(II) (Cu frame)
(P-TSOP(2)50-400-0.80-ZK)
PRODUCT FAMILY
Access Time (Max.)
Family
Max. Frequency
tAC2
5.4ns
5.4ns
5.4ns
6ns
tAC3
5.4ns
5.4ns
5.4ns
6ns
MSM56V16161N -6
MSM56V16161N -7
MSM56V16161N -75
MSM56V16161N -10
166MHz
143MHz
133MHz
100MHz
1/44
LAPIS [ LAPIS Semiconductor Co., Ltd. ]
