Linear Integrated Systems
LS358
LOG CONFORMANCE
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
LOG CONFORMANCE
∆re ≤1Ω
from ideal TYP.
C1
C2
E1
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Collector Current
I
C
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
3
5
E2
10mA
B1
2
6
B2
-65°C to +200°C
+150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
1
C1
B1
E1
E2
B2
7
C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS358
∆re
Log Conformance
1.5
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Collector-Base Breakdown Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
20
20
6.2
45
100
600
100
600
100
0.5
0.2
0.2
2
2
0.5
200
3
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS
Ω
V
V
V
V
CONDITIONS
I
C
= 10-100-1000µA
I
C
= 10µA
I
C
= 10µA
I
E
= 10µA
I
C
= 10µA
I
C
= 10µA
I
C
= 100µA
I
C
= 1mA
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
V
CE
= 5V
NOTE 2
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CB
= 15V
V
EB
= 3V
V
CB
= 5V
V
nA
nA
pF
pF
nA
MHz
dB
I
C
= 1mAI
B
= 0.1 mA
I
E
= 0
I
C
= 0
I
E
= 0
V
CC
= 0
V
CC
=
±45V
I
C
= 1mA
I
C
= 100µA
BW = 200Hz
f=1KHz
V
CE
= 5V
V
CE
= 5V
R
G
= 10 KΩ
Linear Integrated Systems
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