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2SC4617TLR 参数 Datasheet PDF下载

2SC4617TLR图片预览
型号: 2SC4617TLR
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( 50V , 0.15A ) [General purpose transistor (50V, 0.15A)]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 109 K
品牌: LITTELFUSE [ LITTELFUSE ]
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General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029.
Dimensions
(Unit : mm)
(1)
2SC2412K
2SC4081
(1)
0.95 0.95
1.9
0.65 0.65
0.2
2.9
0.4
(3)
0.3
(2)
(3)
1.25
1.6
2.1
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
0~0.1
Structure
Epitaxial planar type
NPN silicon transistor
0.15
0.2
2.8
(2)
0.15
0.8
1.1
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC4617
0.2
(1)
(2)
2SC5658
0.2
1.2
0.8
(2)
(3)
(1)
0.5 0.5
1.0
0.3
1.2
0.32
0.4 0.4
0.8
1.6
0.2
0.15
0.13
0~0.1
0.55
0.5
0.1Min.
0~0.1
0.7
0.15Max.
ROHM :
EMT3
(1) Emitter
(2) Base
(3) Collector
ROHM : VMT3
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
Abbreviated symbol: B*
* Denotes h
FE
Absolute
maximum
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power 2SC2412K, 2SC4081
dissipation
2SC4617, 2SC5658
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
7
0.15
0.2
0.15
150
−55
to
+150
W
°C
°C
Unit
V
V
V
A
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
120
Typ.
180
2
Max.
0.1
0.1
390
0.4
3.5
Unit
V
V
V
μA
μA
V
MHz
pF
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=60V
V
EB
=7V
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
Conditions
www.rohm.com
c
2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.01 - Rev.D
0.22
(1) Base
(2) Emitter
(3) Collector
0.8
(3)
1.6
0~0.1
0.7
0.9
1.3
2.0