Triacs
Data Sheets
Part Number
IT(RMS)
VDRM
IGT
IDRM
Isolated
Non-isolated
(4) (16)
(1)
(3) (7) (15)
(1) (16)
MT2
MT2
MT1
MT2
MT2
G
MT2
MT1
G
G
MT1
MT1
G
Gate
MT1
MT2
MT2
MT2
mAmps
mAmps
TO-3
Fastpak
TO-263
T
=
T
=
T =
C
C
C
2
TO-220
TO-202
TO-220
Volts
D Pak
QI
QII
QIII QIV QIV 25 °C 100 °C 125 °C
MAX
See “Package Dimensions” section for variations. (11)
MIN
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
600
800
600
800
MAX
TYP
MAX
1
1
1
1
3
0.5
0.5
0.5
0.5
3
0.5
0.5
0.5
1
3
1
1
1
Q2010L4
Q4010L4
Q2010R4
Q4010R4
Q6010R4
Q8010R4
QK010R4
Q2010R5
Q4010R5
Q6010R5
Q8010R5
QK010R5
Q2015R5
Q4015R5
Q6015R5
Q8015R5
QK015R5
Q2025R5
Q4025R5
Q6025R5
Q8025R5
QK025R5
Q2010N4
Q4010N4
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
0.05
0.05
0.05
0.1
Q6010L4
Q8010L4
QK010L4
Q2010L5
Q4010L5
Q6010L5
Q8010L5
QK010L5
Q2015L5
Q4015L5
Q6015L5
Q8015L5
QK015L5
Q6010N4
Q8010N4
QK010N4
Q2010N5
Q4010N5
Q6010N5
Q8010N5
QK010N5
Q2015N5
Q4015N5
Q6015N5
Q8015N5
QK015N5
Q2025N5
Q4025N5
Q6025N5
Q8025N5
QK025N5
10 A
0.1
Q2010F51
Q4010F51
Q6010F51
75
75
75
75
75
0.05
0.05
0.05
0.1
2
2
2
2
0.1
0.05
0.05
0.05
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
3
15 A
3
3
3
3
1
3
25 A
35 A
Q6025P5
Q8025P5
Q6035P5
Q8035P5
120
120
120
120
5
5
5
5
V
DRM — Repetitive peak blocking voltage
VGT — DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω
TM — Peak on-state voltage at maximum rated RMS current
Specific Test Conditions
di/dt — Maximum rate-of-change of on-state current; IGT = 200 mA with
V
≤0.1 µs rise time
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
General Notes
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
•
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless specified otherwise.
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
•
Operating temperature range (TJ) is -65 °C to +125 °C for TO-92,
-25 °C to +125 °C for Fastpak, and -40 °C to +125 °C for all other
devices.
for fusing
IDRM — Peak off-state current, gate open; VDRM = maximum rated value
I
GT — DC gate trigger current in specific operating quadrants;
•
Storage temperature range (TS) is -65 °C to +150 °C for TO-92,
-40 °C to +150 °C for TO-202, and -40 °C to +125 °C for all other
devices.
Lead solder temperature is a maximum of 230 °C for 10 seconds,
maximum; ≥1/16" (1.59 mm) from case.
The case temperature (TC) is measured as shown on the dimen-
sional outline drawings. See “Package Dimensions” section of this
catalog.
V
D = 12 V dc
I
I
I
I
GTM — Peak gate trigger current
•
•
H — Holding current (DC); gate open
T(RMS) — RMS on-state current conduction angle of 360°
TSM — Peak one-cycle surge
P
G(AV) — Average gate power dissipation
PGM — Peak gate power dissipation; I ≤ I
GT
GTM
tgt — Gate controlled turn-on time; IGT = 200 mA with 0.1 µs rise time
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©2004 Littelfuse, Inc.
Thyristor Product Catalog
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