Triacs
Data Sheets
Part Number
I
T(RMS)
(4) (16)
MT1
Isolated
MT2
MT2
Non-isolated
MT2
V
DRM
(1)
MT2
I
GT
(3) (7) (15)
I
DRM
(1) (16)
G
MT2
MT1
Gate
MT1
MT2
G
MT1
G
MT2
MT1
G
MT2
mAmps
TO-263
D
2
Pak
Q2010N4
Q4010N4
Q6010N4
Q8010N4
QK010N4
Q2010N5
Q4010N5
Q6010N5
Q8010N5
QK010N5
Q2015N5
Q4015N5
Q6015N5
Q8015N5
QK015N5
Q2025N5
Q4025N5
Q6025N5
Q8025N5
QK025N5
Volts
MIN
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
600
800
600
800
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
QI
QII
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
QIII
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
120
120
120
120
QIV
50
50
50
50
50
75
75
75
75
75
QIV
TYP
0.05
0.05
0.05
0.1
0.1
0.05
0.05
0.05
0.1
0.1
0.05
0.05
0.05
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
T
C
=
25 °C
mAmps
T
C
=
T
C
=
100 °C 125 °C
MAX
1
1
1
1
3
0.5
0.5
0.5
0.5
3
0.5
0.5
0.5
1
3
1
1
1
1
3
5
5
5
5
3
3
3
3
2
2
2
3
2
2
2
2
TO-3
Fastpak
MAX
TO-220
Q2010L4
Q4010L4
Q6010L4
Q8010L4
TO-202
TO-220
Q2010R4
Q4010R4
Q6010R4
Q8010R4
QK010R4
See “Package Dimensions” section for variations. (11)
MAX
10 A
QK010L4
Q2010L5
Q4010L5
Q6010L5
Q8010L5
QK010L5
Q2015L5
Q4015L5
Q6015L5
Q8015L5
QK015L5
Q2010F51
Q4010F51
Q6010F51
Q2010R5
Q4010R5
Q6010R5
Q8010R5
QK010R5
Q2015R5
Q4015R5
Q6015R5
Q8015R5
QK015R5
Q2025R5
Q4025R5
Q6025R5
15 A
25 A
Q6025P5
Q8025P5
Q8025R5
QK025R5
35 A
Q6035P5
Q8035P5
Specific Test Conditions
di/dt
— Maximum rate-of-change of on-state current; I
GT
= 200 mA with
≤0.1
µ
s rise time
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
gate open
dv/dt(c)
— Critical rate-of-rise of commutation voltage at rated V
DRM
and I
T(RMS)
commutating di/dt = 0.54 rated I
T(RMS)
/ms; gate
unenergized
I
2
t
— RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
I
DRM
— Peak off-state current, gate open; V
DRM
= maximum rated value
I
GT
— DC gate trigger current in specific operating quadrants;
V
D
= 12 V dc
I
GTM
— Peak gate trigger current
I
H
— Holding current (DC); gate open
I
T(RMS)
— RMS on-state current conduction angle of 360°
I
TSM
— Peak one-cycle surge
P
G(AV)
— Average gate power dissipation
P
GM
— Peak gate power dissipation;
I
GT
≤
I
GTM
t
gt
— Gate controlled turn-on time; I
GT
= 200 mA with 0.1
µ
s rise time
V
DRM
— Repetitive peak blocking voltage
V
GT
— DC gate trigger voltage; V
D
= 12 V dc; R
L
= 60
Ω
V
TM
— Peak on-state voltage at maximum rated RMS current
General Notes
•
•
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25
°C
unless specified otherwise.
Operating temperature range (T
J
) is -65
°C
to +125
°C
for TO-92,
-25 °C to +125 °C for Fastpak, and -40
°C
to +125
°C
for all other
devices.
Storage temperature range (T
S
) is -65
°C
to +150
°C
for TO-92,
-40
°C
to +150
°C
for TO-202, and -40
°C
to +125
°C
for all other
devices.
Lead solder temperature is a maximum of 230
°C
for 10 seconds,
maximum;
≥1/16"
(1.59 mm) from case.
The case temperature (T
C
) is measured as shown on the dimen-
sional outline drawings. See “Package Dimensions” section of this
catalog.
•
•
•
http://www.littelfuse.com
+1 972-580-7777
E2 - 4
©2004 Littelfuse, Inc.
Thyristor Product Catalog
LITTELFUSE [ LITTELFUSE ]
