LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1.0 MΩ)
Drain Current
– Continuous T
C
= 25°C (Note 1.)
– Continuous
T
C
= 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
µs)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
Value
60
60
±115
±75
±800
Unit
V
dc
V
dc
mAdc
L2N7002LT1
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
V
GS
V
GSM
±20
±40
Vdc
Vpk
115 mAMPS
60 VOLTS
R
DS(on)
= 7.5
W
N - Channel
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J,
T
stg
417
–55 to
+150
°C/W
°C
Unit
mW
mW/°C
°C/W
mW
mW/°C
1
R
θJA
P
D
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
1
702
W
2
Gate
702
W
Source
= Device Code
= Work Week
ORDERING INFORMATION
Device
2N7002LT1
2N7002LT3
Package
SOT–23
SOT–23
Shipping
3000 Tape & Reel
10,000 Tape & Reel
L2N7002LT1–1/3
LRC [ LESHAN RADIO COMPANY ]
