LESHAN RADIO COMPANY, LTD.
Switching Transistors
NPN Silicon
1
BASE
3
COLLECTOR
MMBT2369LT1
MMBT2369ALT1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CES
V
CBO
V
EBO
2
EMITTER
Value
15
40
40
4.5
200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBT2369LT1 = M1J, MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 10 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µAdc,
V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current( V
CB
= 20Vdc, I
E
= 0)
( V
CB
= 20Vdc, I
E
= 0, T
A
=150 °C)
Collector Cutoff Current
( V
CE
= 20Vdc, V
BE
= 0)
MMBT2369A
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
I
CES
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
15
40
40
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.4
30
0.4
Vdc
Vdc
Vdc
Vdc
µAdc
µAdc
I
CBO
O6–1/5
LRC [ LESHAN RADIO COMPANY ]
