MRF151G
Part Status: Released
RF Power Field-Effect Transistor
300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Features
Guaranteed Performance at 175 MHz, 50 V:
M/A-COM Products
RoHS Compliant
Package Outline
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Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
Low Thermal Resistance — 0.35°C/W
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Description and Applications
Designed for broadband commercial and military
applications at frequencies to 175 MHz. The high
power, high gain and broadband performance of this
device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.
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ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
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North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
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Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
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Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.