SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF392/D
The RF Line
NPN Silicon Push-Pull
RF Power Transistor
Designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
•
Specified 28 Volt, 400 MHz Characteristics —
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
•
Built–In Input Impedance Matching Networks for Broadband Operation
•
Push–Pull Configuration Reduces Even Numbered Harmonics
•
Gold Metallization System for High Reliability
•
100% Tested for Load Mismatch
MRF392
125 W, 30 to 500 MHz
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
2
6
5, 8
7
3
CASE 744A–01, STYLE 1
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
1, 4
PUSH–PULL TRANSISTORS
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
30
60
4.0
16
270
1.54
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.65
Unit
°C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
REV 8
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
