PRODUCT: SESD0201C-006-058
ESD Protector
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
Overvoltage Protection Device
Circuit Protection Products
DOCUMENT: SCD
27716
REV LETTER: A
REV DATE: SEPTEMBER 11, 2009
PAGE NO.: Page 1 of 5
Specification Status: Released
BENEFITS
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Small-size bi-directional ESD protection diodes
Appropriate for ESD protection in space-constrained
portable electronics and mobile handsets
Bi-directional operation allows placement on PCB
without orientation constraint
Helps protect electronic circuits against damage from
Electrostatic Discharge (ESD) events
Assist equipment to pass IEC61000-4-2, level 4
testing
RoHS compliant and Halogen Free
FEATURES
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Ultra-low Input capacitance – 0.6pF (typ)
Low leakage current – 1.0µA (max)
Low breakdown voltage – 5.8V (min)
ESD maximum rating per IEC61000-4-2 standard
o
± 8kV contact discharge
o
± 15kV air discharge
Capable of withstanding numerous ESD strikes
Small package size: 0.60mm x 0.30mm
Low package height: 0.27mm
PART NUMBERING
SESD 0201 C - 006 - 058
Series
EIA Size
Chip Scale Package
Input Capacitance
0.6 pF (typ)
Breakdown Voltage
5.8V (min)
APPLICATIONS
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Cellular phones and portable electronics
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High speed data lines and low voltage antenna ports
•
USB 2.0/3.0, HDMI 1.3/1.4, and DisplayPort
o
Less than 0.8dB insertion loss up to 5.0GHz
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Applications requiring ESD performance in an ultra-
small package
Device Characteristics @ T = 25
o
C
Input Capacitance @ V
r
= 0V, f = 1MHz
Working Reverse Voltage (peak) - V
wrv
Breakdown Voltage – V
br
@ I
t
= 1mA
Leakage current @ V
wrv
= 5.0V
Total Power Dissipation - Pd (on 30mm x 30mm FR-4)
ESD contact discharge per IEC61000-4-2 standard
ESD air discharge per IEC61000-4-2 standard
Operating (T
junction
) and Storage Temperature Range
(1)
MATERIALS INFORMATION
RoHS Compliant
ELV Compliant
Halogen Free
*
HF
*
Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm
Min
--
--
5.8
--
--
--
--
Typ
0.6
--
--
--
--
--
--
-40 to +125
Max
0.9
5.0
--
1.0
250
±8
±15
Unit
pF
V
V
uA
mW
kV
kV
0
C
(1)
V
br
is measured at test current I
t