1 Megabit (128K x 8-Bit) EEPROM
28C010T
2.
t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3.
Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4.
Guaranteed by design.
T
ABLE
9. 28C010T M
ODE
S
ELECTION 1
P
ARAMETER
Read
Standby
Write
Deselect
Write Inhibit
Data Polling
Program
1. X = Don’t care.
CE
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
X
OE
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
X
WE
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
X
I/O
D
OUT
High-Z
D
IN
High-Z
--
--
Data Out (I/O7)
High-Z
RES
V
H
X
V
H
V
H
X
X
V
H
V
IL
RDY/BUSY
High-Z
High-Z
High-Z --> V
OL
High-Z
--
--
V
OL
High-Z
Memory
F
IGURE
1. R
EAD
T
IMING
W
AVEFORM
06.03.03 REV 14
All data sheets are subject to change without notice
7
©2003 Maxwell Technologies
All rights reserved.