28C010T
1 Megabit (128K x 8-Bit) EEPROM
1
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNITS
Address Access Time
CE = OE = V , WE = V
tACC
9, 10, 11
ns
IL
IH
-120
-150
-200
--
--
--
120
150
200
Chip Enable Access Time
OE = V , WE = V
-120
-150
-200
tCE
tOE
tOH
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
IL
IH
--
--
--
120
150
200
Output Enable Access Time
CE = V , WE = V
IL
IH
-120
-150
-200
0
0
0
75
75
100
Output Hold to Address Change
CE = OE = V , WE = V
IL
IH
-120
-150
-200
0
0
0
--
--
--
Output Disable to High-Z 2
CE = V , WE = V
tDF
IL
IH
-120
-150
-200
0
0
0
50
50
60
CE = OE = V , WE = V
IL
IH
-120
-150
-200
tDFR
0
0
0
300
350
450
RES to Output Delay3
CE = OE = V , WE = V
tRR
9, 10, 11
ns
IL
IH
-120
-150
-200
--
--
--
400
450
650
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
06.03.03 REV 14
All data sheets are subject to change without notice
4
©2003 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
