28C011T
1 Megabit (128K x 8-Bit) EEPROM
1
TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5V + 10%, TA = -55 TO +125 °C)
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNITS
Output Enable Access Time
CE = V , WE = V
tOE
9, 10, 11
ns
IL
IH
-120
-150
-200
0
0
0
75
75
100
Output Hold to Address Change
CE = OE = V , WE = V
-120
-150
-200
tOH
9, 10, 11
9, 10, 11
ns
ns
IL
IH
0
0
0
--
--
--
Output Disable to High-Z 2
CE = V , WE = V
tDF
IL
IH
-120
-150
-200
0
0
0
50
50
60
CE = OE = V , WE = V
IL
IH
-120
-150
-200
tDFR
0
0
0
300
350
450
RES to Output Delay3
CE = OE = V , WE = V
tRR
9, 10, 11
ns
IL
IH
-120
-150
-200
--
--
--
400
450
650
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNITS
MIN
Address Setup Time
tAS
9, 10, 11
ns
-120
-150
-200
0
0
0
--
--
--
Chip Enable to Write Setup Time (WE controlled)
tCS
9, 10, 11
-120
-150
-200
0
0
0
--
--
--
ns
11.10.03 REV 10
All data sheets are subject to change without notice
4
©2003 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
